A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures

摘要

Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities forcryogenic nano-scale devices, such as Si quantum devices and superconductingdevices. We present experimental results on a novel device architecture wherethe gate electrode is self-aligned with the device channel and overlaps thesource and drain electrodes. This facilitates a sub-5 nm gap between thesource/drain and channel, and no spacers are required. At cryogenictemperatures, such devices function as p-MOS Tunnel FETs, as determined by theSchottky barrier at the Al-Si interface, and as a further advantage,fabrication processes are compatible with both CMOS and superconducting logictechnology.